Bd539 NPN Transistor

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Description

Characteristics of BD539 NPN Transistor

  • Type – NPN
  • Collector-Emitter Voltage: 40 V
  • Collector-Base Voltage: 40 V
  • Emitter-Base Voltage: 5 V
  • Collector Current: 5 A
  • Collector Dissipation – 45 W
  • DC Current Gain (hfe) – 40
  • Operating and Storage Junction Temperature Range -65 to +150 °C
  • Package – TO-220

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